期刊
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
卷 31, 期 12, 页码 1271-1274出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2021.3098480
关键词
Silicon carbide; Radio frequency; Tuning; Couplings; Prototypes; Microwave filters; Frequency measurement; Bandstop filter (BSF); coaxial filter; compact filter
This letter discusses the RF design and practical realization of dual-bandstop filters with compact size and two independently controlled rejection bands. The filters are based on miniaturized substrate-integrated-coaxial resonant stages and achieve further miniaturization by tuning the center frequency of the bands. Three prototypes were designed, manufactured, and measured to validate the concept.
This letter discusses the RF design and practical realization of dual-bandstop filters (BSFs) with compact size and two independently controlled rejection bands. They are based on miniaturized substrate-integrated-coaxial (SIC) resonant stages that are made from two capacitively loaded posts and a thru-line. Each of the stages creates two transmission zeros (TZs) that can be exploited for the realization of dual-bandstop RF filters with approximately half the size of conventional single-post series-cascaded SIC filter configurations. Further miniaturization is achieved by tuning the center frequency of the bands. For proof-of-concept validation purposes, three prototypes were designed, manufactured, and measured. They include a static (rejection bands centered at 4 and 4.5 GHz) and a tunable (between 3.6-4.6 GHz) dual-bandstop second-order RF filters and a third-order dual-bandstop RF filter with bands centered at 4 and 4.4 GHz.
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