期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 57, 期 1, 页码 68-79出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2021.3101209
关键词
Computer architecture; Resistance; Reliability; Artificial intelligence; Phase change random access memory; Integrated circuit reliability; Current control; Computing-in-memory (CIM); convolutional neural network (CNN); multiply-and-accumulate (MAC); processing-in-memory; read (RD) disturb; resistive RAM (RRAM); write (WR) verification
资金
- Semiconductor Research Corporation through the Center for Brain-Inspired Computing (C-BRIC) [2777.005, 2777.006]
- Applications and Systems-Driven Center for Energy-Efficient Integrated Nano Technologies (ASCENT) [2776.037]
- TSMC with technical discussions and chip fabrication
RRAM is a promising candidate for computing-in-memory architectures due to its advantages in efficiency and density, although reliability issues require a joint approach with circuit technology. This article introduces a hybrid CIM/digital RRAM macro with various functions, achieving high energy efficiency and performance goals.
Computing-in-memory (CIM) architectures have gained importance in achieving high-throughput energy-efficient artificial intelligence (AI) systems. Resistive RAM (RRAM) is a promising candidate for CIM architectures due to a multiply-and-accumulate (MAC)-friendly structure, high bit density, compatibility with a CMOS process, and nonvolatility. Notwithstanding the advancement of RRAM technology, the reliability of an RRAM array hinders the spread of RRAM applications such that a circuit-technology joint approach is necessary to attain reliable RRAM-based CIM architectures. This article presents a 64-kb hybrid CIM/digital RRAM macro supporting: 1) active-feedback-based voltage-sensing read (RD) to enable 1-8-b programmable vector-matrix multiplication under a low-resistance ratio of the high-resistance state to the low-resistance state in an RRAM array; 2) iterative write with verification to secure a tight resistance distribution; and 3) online RD-disturb detection in the background during CIM. The test chip fabricated in a 40-nm CMOS and RRAM process achieves a peak energy efficiency of 56.67 TOPS/W while demonstrating the eight-bitline hybrid CIM/digital MAC operation with 1-8-b inputs and weights and 20-b outputs without quantization.
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