期刊
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
卷 64, 期 12, 页码 4241-4249出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2016.2613850
关键词
CMOS silicon on insulator (SOI); phased array; quadrupler; quartz; terahertz (THz); W-band amplifier; W-band vector modulator
This paper presents a 370-410-GHz phased-array transmitter, which is based on a W-band distribution network, amplifiers, and vector modulators, feeding a linear eight-element quadrupler array. The quadrupler outputs are connected to high-efficiency microstrip antennas. The design is scalable to a large number of elements, since most of the chip operates at W-band frequencies. The chip is built using 45-nm CMOS silicon on insulator technology, which offers transistors with f(t) and f(max) of 250-260 GHz referenced to the top metal. The phased array results an equivalent isotropic radiated power (EIRP) of >5 dBm at 375-405 dBm with a peak EIRP of 7-8.5 dBm at 380-400 GHz and with a pattern scan of +/-35 degrees in one plane. To the best of our knowledge, this is one of the first demonstrations of a phased array operating at 400 GHz using CMOS technology and with wide operating bandwidth.
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