期刊
IEEE ELECTRON DEVICE LETTERS
卷 42, 期 11, 页码 1631-1633出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3111616
关键词
Porous-GaN; microcavity; distributed Bragg reflectors (DBR); tunneling junction
资金
- Ministry of Science and Technology of Taiwan [108-2221-E-005-035-MY2, 109-2221-E-005-037-MY2]
In this study, InGaN-based resonant cavity light-emitting diode structures with top and bottom porous-GaN distributed Bragg reflectors were demonstrated. The electroluminescence spectra line-widths were significantly reduced due to the resonant microcavity effect, improving the performance of the devices.
InGaN-based resonant cavity light-emitting diode (RC-LED) structures with top and bottom porous-GaN distributed Bragg reflectors (DBRs) were demonstrated. Epitaxial n(+)-GaN:Si/n-GaN:Si stack structures were transformed into top/bottom porous-GaN:Si/n-GaN:SiDBRs through a doping-selective electrochemical wet etching process. The n(+)-porous-GaN/p(+)-GaN tunneling junction structure was designed for the current injecting into the InGaN active layer. The line-widths of the electroluminescence spectra were reduced from 23.3 nm at 434.0 nm to 1.9 nm at 434.1 nm due to the resonant microcavity effect.
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