Highly Reliable Selection Behavior With Controlled Ag Doping of Nano-Polycrystalline ZnO Layer for 3D X-Point Framework

In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO switching layer (SL) having (002) preferred orientation has been manifested, without incorporating an active Ag metal layer, using a facile co-sputtering deposition technique. The TS selectors with extremely controlled doping of similar to 0.14 at. % Ag concentration showed remarkable electroforming (EF)-free selection behavior such as gigantic selectivity (similar to 10(11)), extreme-low off-current (similar to 10 fA), high on-current density (similar to 1.6 MA/cm(2)), ultra-steep switching slope (similar to 0.8 mV/decade), satisfactory endurance (>10(6)), fast switch-on speed (similar to 38 ns) and relaxation speed (similar to 64 ns), and high device yield (similar to 90%). Furthermore, selector devices showed reproducible selection behavior with stable threshold voltage (V-th) having merely similar to 8% variances.

Automated summary

In this study, a threshold switching (TS) selector with an Ag doping-based nano-polycrystalline ZnO switching layer was developed. The TS selector showed remarkable electroforming-free selection behavior, high device yield, and stable threshold voltage.