Improving Drain-Induced Barrier Lowering Effect and Hot Carrier Reliability With Terminal via Structure on Half-Corbino Organic Thin-Film Transistors

This study proposes a terminal via structure for half-Corbino organic thin-film transistors (OTFTs) to improve drain-induced barrier lowering (DIBL) effect and reliability. A sub-channel conduction and DIBL phenomenon due to high drain voltages are observed on the I-D -V-G curves of traditional half-Corbino OTFTs. The device breaks down at a drain voltage of - 40 V. This is attributed to the strong electric field between the source/drain corner edge, which is verified by a COMSOL electric field simulation. The degradation behavior is inhibited through the terminal via structure. In addition, the terminal via structure reduces the on-current degradation by dispersing heat near the corner edge after the hot carrier effect.

Automated summary

A terminal via structure is proposed to improve the drain-induced barrier lowering (DIBL) effect and reliability of half-Corbino organic thin-film transistors (OTFTs). The traditional structure experiences sub-channel conduction and breakdown at high drain voltages, which is inhibited by the terminal via structure.