Polymer Thin Film Memtransistors Based on Ion-Carrier Exchange Heterojunction

Polymer thin film memtransistors were realized with a solution-processed bilayer structure, which manifested as the ion-carrier exchange heterojunction. The temporal and spatial evolution of the ion-carrier exchange in the devices resulted in the memristive characteristics in both vertical and horizontal directions, and the effective horizontal conductivity could be several orders higher than the vertical one. The device features may pave a promising way for emulating synaptic interactions based on a polymer functional thin film.

Automated summary

Polymer thin film memtransistors were successfully fabricated using a solution-processed bilayer structure, showing ion-carrier exchange heterojunction. The device exhibited memristive characteristics in both vertical and horizontal directions due to the temporal and spatial evolution of ion-carrier exchange, with the horizontal conductivity being significantly higher than the vertical one. These unique features may enable promising emulation of synaptic interactions based on polymer functional thin films.