期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 2, 页码 264-267出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3133866
关键词
beta-gallium oxide; Schottky barrier diode; air exposure; surface treatment
资金
- NSFC [61925110, U20A20207, 61821091, 62004184, 62004186, 51961145110]
- Strategic Priority Research Program of the Chinese Academy of Sciences (CAS) [XDB44000000]
- Key Research Program of Frontier Sciences of CAS [QYZDB-SSW-JSC048]
- Key-Area Research and Development Program of Guangdong Province [2020B010174002]
- Opening Project of Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics of CAS
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics of CAS
This work demonstrates vertical beta-Ga2O3 Schottky barrier diodes (SBDs) breaking through the power figure of merit of 1 GW/cm(2) without edge termination. The unreliable surface on the top of the drift region, which naturally formed in air, was removed by inductively coupled plasma etching. The repaired surface was exposed to ambient air for less than 10 minutes during the entire preparation process. Compared with the excessive air exposure samples, the leakage current was well suppressed for the Ni/beta-Ga2O3 SBDs fabricated on a clean surface. Moreover, the blocking voltage reaches a maximum value of 1720 V, and the forward/reverse characteristics of the diodes on the same wafer show good uniformity. These results pave the way for further improving the performance of beta-Ga2O3 devices and verify the potential of beta-Ga2O3 SBDs for power applications.
This work demonstrates vertical beta-Ga2O3 Schottky barrier diodes (SBDs) breaking through the power figure of merit of 1 GW/cm(2) without edge termination. The unreliable surfaceon the top of similar to 1.2x10(16) cm(-3) drift region, which naturally formed in air, was removed by inductively coupled plasma etching. The repaired surface was exposed to ambient air for less than 10 minutes during the entire preparation process. Compared with the excessive air exposure samples, the leakage current was well suppressed for the Ni/beta-Ga2O3 SBDs fabricated on a clean surface. Moreover, the blocking voltage reaches a maximum value of 1720 V, and the forward/reverse characteristics of the diodes on the same wafer show good uniformity. These results pave the way for further improving the performance of beta-Ga2O3 devices and verify the potential of beta-Ga2O3 SBDs for power applications.
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