4.6 Article

A Configurable Artificial Neuron Based on a Threshold-Tunable TiN/NbO&x2093;/Pt Memristor

期刊

IEEE ELECTRON DEVICE LETTERS
卷 43, 期 4, 页码 631-634

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3150034

关键词

Threshold voltage; Neurons; Tuning; Memristors; Voltage measurement; Resistance; Electrodes; Neuromorphic computing; memristors; threshold-tunable; spiking neurons

资金

  1. Major Program of the Ministry of Science and Technology of China [2019YFB2205102]
  2. National Natural Science Foundation of China [61825404, 61974164, 62074166, 61804181, 62004219, 62004220, 62104256]

向作者/读者索取更多资源

In this letter, the authors present a configurable neuron constructed using Memristors, which have simple structures and high-density integration. They design a memristor with a tunable threshold and demonstrate its ability to construct configurable neurons with different response curves. The results suggest that the device is suitable for maintaining homeostasis and improving the stability of computing systems.
Due to their simple structures and high-density integration, Memristors are employed to construct hardware spiking neurons. In this letter, we present a TiN/NbOx/Pt memristor with a tunable threshold for constructing configurable neurons. By applying positive tuning voltages with different compliance currents, the device exhibits multilevel negative threshold voltages. Additionally, by changing the amplitudes/widths of positive tuning pulses, we obtain a quasi-linear modulation of negative threshold voltages. Based on such a device, we construct a leaky integrate-and-fire neuron with configurable curves between the response speed and the excitatory input. These results indicate that our device is suitable to construct a configurable neuron, which is expected to maintain homeostasis and improve the stability of computing systems.

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