期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 4, 页码 631-634出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3150034
关键词
Threshold voltage; Neurons; Tuning; Memristors; Voltage measurement; Resistance; Electrodes; Neuromorphic computing; memristors; threshold-tunable; spiking neurons
资金
- Major Program of the Ministry of Science and Technology of China [2019YFB2205102]
- National Natural Science Foundation of China [61825404, 61974164, 62074166, 61804181, 62004219, 62004220, 62104256]
In this letter, the authors present a configurable neuron constructed using Memristors, which have simple structures and high-density integration. They design a memristor with a tunable threshold and demonstrate its ability to construct configurable neurons with different response curves. The results suggest that the device is suitable for maintaining homeostasis and improving the stability of computing systems.
Due to their simple structures and high-density integration, Memristors are employed to construct hardware spiking neurons. In this letter, we present a TiN/NbOx/Pt memristor with a tunable threshold for constructing configurable neurons. By applying positive tuning voltages with different compliance currents, the device exhibits multilevel negative threshold voltages. Additionally, by changing the amplitudes/widths of positive tuning pulses, we obtain a quasi-linear modulation of negative threshold voltages. Based on such a device, we construct a leaky integrate-and-fire neuron with configurable curves between the response speed and the excitatory input. These results indicate that our device is suitable to construct a configurable neuron, which is expected to maintain homeostasis and improve the stability of computing systems.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据