期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 3, 页码 442-445出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3145374
关键词
Gas detectors; Signal to noise ratio; Sensors; Field effect transistors; Transducers; Fluctuations; Logic gates; Gas sensors; IGZO; low-frequency noise (LFN); signal-to-noise ratio (SNR); NO2
资金
- National Research Foundation of Korea (NRF) [2021R1A2C3009069]
- BK21 FOUR Program of the Education and Research Program for Future ICT Pioneers, Seoul National University
- National Research Foundation of Korea [2021R1A2C3009069] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This study investigates the effects of channel length (L) scaling on the signal-to-noise ratio (SNR) of FET-type gas sensors with a horizontal floating-gate. It is found that SNR is proportional to the square root of the channel length (L) of the FET transducer. The low-frequency noise characteristics of the FET-type gas sensor can be explained by the carrier number fluctuation model with correlated mobility fluctuation, providing important guidelines for designing sensor platforms in FET-type gas sensors.
We investigate the channel length (L) scaling effects on the signal-to-noise ratio (SNR) of the field-effect-transistor (FET)-type gas sensor with a horizontal floating-gate. A sensing layer, 15 nm of indium-gallium-zinc-oxide thin film, is deposited by the radio frequency sputtering method. Nitrogen dioxide is used as a target gas. The low-frequency noise characteristics of the FET-type gas sensor are explained by the carrier number fluctuation model with correlated mobility fluctuation. The SNR is proportional to the square root of the Lof the FET transducer. The result provides important guidelines in designing the sensor platform in FET-type gas sensors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
