Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices

Resistive RAM (RRAM) or memristors are a class of electronic device whose resistance depends on voltage history. The changes in resistance can be divided into two categories, volatile and non-volatile. To date, the characteristics of non-volatile switching have been explored extensively with volatile switching behaviour still remaining more obscure. Here we investigate the temperature effects on TiOx based memristor volatility, and integrate these observations into a previously developed model for volatile switching. We show how device temperature affects the magnitude of the volatile resistive state in response to input stimulation, as well as the corresponding relaxation time constant. Importantly, these effects are polarity dependent. This work is part of an effort towards building a more comprehensive model of RRAM behaviour covering volatile and non-volatile phenomena as well as various environmental effects on them.

Automated summary

This research examines the effects of temperature on the volatility of resistive RAM (RRAM) and proposes a model that incorporates these temperature effects into the previously developed model for volatile switching. The study reveals the impact of device temperature on resistive state magnitude and relaxation time constant, with polarity also playing a role.