A 0.43 V/90 nA/mm Lateral AlGaN/GaN Schottky Barrier Diode With Plasma-Free Groove Anode Technique

In this letter, high-performance AlGaN/GaN Schottky barrier diodes (SBDs) with a great balance between forward and reverse characteristics are demonstrated. Benefiting from a plasma-free, low-damaged wet etching technique of an AlGaN layer at the anode region and low work-function tungsten (W) as the anode, lateral GaN SBDs with a low turn-on voltage (V-T) of 0.43 V and a low reverse current (I-R) of 90 nA/mm are obtained. Meanwhile, owing to the flattened self-terminated etching surface and the assistance of SiN passivation grown by low-pressure chemical vapor deposition, a high breakdown voltage of 1.83 kV and a power figure-of-merit (FOM) of 1.20 GW/cm(2) are achieved for the fabricated GaN SBD with a spatial distance (L-AC) of 15 mu m from cathode to anode. The lateral GaN SBD fabricated with the optimized wet etching technique shows great potential for next-generation power electronics.

Automated summary

The letter presents high-performance AlGaN/GaN SBDs with a balance between forward and reverse characteristics. Lateral GaN SBDs with low turn-on voltage and low reverse current were obtained using optimized wet etching technique and low work-function anode. Additionally, a high breakdown voltage and power figure-of-merit were achieved for the fabricated GaN SBD with specific spatial distance and optimized wet etching technique, showing great potential for next-generation power electronics.