期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 1, 页码 120-123出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3131010
关键词
Organic light emitting diodes; Metals; Charge carrier processes; Numerical simulation; Numerical models; Zinc; Voltage; Schiff base complexes; TCAD simulation; organic light emitting diode (OLED)
This study conducted an in-depth numerical simulation to investigate the efficiency of new NG Schiff base complexes in OLED devices. The optimized device with an Al3+ base showed enhanced luminescence and power efficiency by introducing a PEDOT: PSS hole transporting layer and replacing the aluminum cathode with magnesium.
In this work, an in-depth numerical simulation based on drift diffusion and Poisson equation is undertaken to study the efficiency of new ninhydrin-glycine (NG) Schiff base complexes in monolayer organic light emitting diodes (OLED) devices. The Technology Computer-Aided Design (TCAD) simulation prove that NG complex with Al3+ metal exhibit the maximum current and the lowest turn-on voltage compared to the three NG materials with Co2+, Zn2+ and Fe3+ metals. In the endeavors to achieve better efficiency, we have optimized the OLED device based on Al3+ by improving the electron and hole injections. Thus, an enhanced luminescence of 6752 cd/m(2) and a power efficiency equal to 29.12 lmW(-1) are achieved by introducing a PEDOT: PSS hole transporting layer and by replacing aluminum cathode with magnesium.
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