期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 1, 页码 80-83出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3131375
关键词
mu LED; HEMT; phototransistor; monolithic integration
资金
- National Natural Science Foundation of China [62027818, 11974320, 61874034]
- International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan [21520713300]
In this letter, a monolithically photonic integrated device based on the configuration of an InGaN/GaN micro-light-emitting diode (mu LED) in series with an AlGaN/GaN high-electron-mobility transistor (HEMT) is reported. The device can function as both a transmitter and a receiver, demonstrating a large modulation bandwidth and responsivity. Additionally, the device is able to convert received ultraviolet light signals into visible light signals and emit them.
In this letter, we report a monolithically photonic integrated device based on the configuration of an InGaN/GaN micro-light-emitting diode (mu LED) in series with an AlGaN/GaN high-electron-mobility transistor (HEMT). As an ultraviolet phototransistor, the HEMT unit can act as both the optical and the electrical input ports of this integrated device. When the device is used as a transmitter, a 3-dB modulation bandwidth of approximate 300 MHz can be obtained. When the device is used as a receiver, a response time of < 10 ms and a responsivity of similar to 10(7) A/W was demonstrated under 365 nm ultraviolet light. In addition, the received ultraviolet light signal can be converted into a higher-intensity visible light signal and emitted through the mu LED. The proposed monolithically integrated device shows great potential for on-chip optical interconnection and communication.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据