期刊
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
卷 64, 期 1, 页码 96-105出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2015.2504443
关键词
Channel; dielectric waveguide; interconnect; micromachined; sub-THz; terahertz (THz)
资金
- National Science Foundation
This paper presents for the first time the design, fabrication, and demonstration of a micromachined silicon dielectric waveguide based sub-THz interconnect channel for a high-efficiency, low-cost sub-THz interconnect, aiming to solve the long-standing intrachip/interchip interconnect problem. Careful studies of the loss mechanisms in the proposed sub-THz interconnect channel are carried out to optimize the design. Both theoretical and experimental results are provided with good agreement. To guide the channel design, a new figure of merit is also defined. The insertion loss of this first prototype with a 6-mm-long interconnect channel is about 8.4 dB at 209.7 GHz, with a 3-dB bandwidth of 12.6 GHz.
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