期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 63, 期 4, 页码 1995-2004出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2015.2506628
关键词
Bipolar junction transistor (BJT); driver circuits; failure analysis; fault detection; fault protection; junction field-effect transistor (JFET); power MOSFET; semiconductor device reliability; short-circuit current; silicon carbide (SiC); wide-bandgap semiconductors
资金
- Alstom
- Swedish Energy Agency
- Vinnova
An experimental analysis of the behavior under short-circuit conditions of three different silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short circuits. A transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET. It was found that, for reliability reasons, the short-circuit time should be limited to values well below Si IGBT tolerances. Guidelines toward a rugged design for short-circuit protection (SCP) are presented with an emphasis on improving the reliability and availability of the overall system. A SiC device driver with an integrated SCP is presented for each device-type, respectively, where a short-circuit detection is added to a conventional driver design in a simple way. The SCP driver was experimentally evaluated with a detection time of 180 ns. For all devices, short-circuit times well below 1 mu s were achieved.
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