期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 63, 期 12, 页码 4986-4992出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2614436
关键词
Compact modeling; ferroelectric; negative capacitance; negative capacitance FET (NCFET); negative differential resistance (NDR); temperature effects; transients
资金
- Council of Scientific and Industrial Research, Department of Science and Technology, Science and Engineering Research Board, Government of India
- Semiconductor Research Corporation
In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an expected high ON current and a sub-60 mV/decade subthreshold swing. The model is also tested for the Gummel symmetry and its transient capabilities
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