An Optically Readable InGaN/GaN RRAM

The unidirectional bipolar resistance switching in GaN/InGaN-based light-emitting diode (LED) was discovered to explore optically readable resistive random access memory (RRAM) device. The device displays stable resistance window in both endurance and retention tests, showing good nonvolatility for memory application. The light-emitting state of this device can also be tuned by the resistance switching. Such phenomenon is illustrated as the switching between conventional light-emitting rectifying behavior and nonlight-emitting metal-like ohmic behavior. Large amount of structural and point defects in the epitaxial wafer were considered as the main contributor to the resistance switching in LED device.