High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm(-3) p doping, a V-th of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

Automated summary

This paper presents a Normally-OFF GaN HEMT device with a p-doped GaN barrier layer regrown by CBE, achieving a V-th of 1.5 V with 4E17 cm(-3) p doping. The impact of p doping on device performance was investigated using a TCAD simulator. The breakdown of the fabricated device was examined, and the cause of device failure was identified.