相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH
Laura Vauche et al.
ACS APPLIED ELECTRONIC MATERIALS (2021)
Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method
R. Kom Kammeugne et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics
Hogyoung Kim et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2019)
AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation
Masaaki Kuzuhara et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
Shenghou Liu et al.
APPLIED PHYSICS LETTERS (2015)
Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors
Sen Huang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition
T. A. Henry et al.
APPLIED PHYSICS LETTERS (2012)
A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors
M. Tapajna et al.
APPLIED PHYSICS LETTERS (2012)
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Jungwoo Joh et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
G. Dingemans et al.
JOURNAL OF APPLIED PHYSICS (2011)
Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology
R. Luptak et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
Charge trapping and detrapping in polymeric materials
George Chen et al.
JOURNAL OF APPLIED PHYSICS (2009)
Evidence for Two Mg Related Acceptors in GaN
B. Monemar et al.
PHYSICAL REVIEW LETTERS (2009)
Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
J Buckley et al.
MICROELECTRONIC ENGINEERING (2005)
Determination of interface and bulk traps in the subthreshold region of polycrystalline silicon thin-film transistors
NA Hastas et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
分享论文
