GaSb-Based p-i-n Photodiodes With Partially Depleted Absorbers for High-Speed and High-Power Performance at 2.5-μm Wavelength

We first demonstrate a novel high-speed and high-power p-i-n photodiode with a cutoff wavelength at similar to 2.5 mu m. This device is composed of a partially depleted p-type Ga0.8In0.2As0.16Sb0.84 photo-absorption layer grown on GaSb substrate in order to enhance its speed and saturation power performance. With proper passivation processes, a low dark current (similar to 0.7 mu A) and wide (6 GHz) optical-to-electrical (O-E) bandwidth can be simultaneously achieved with a miniaturized size of active mesa diameter (similar to 8 mu m) under 1.55-mu m optical wavelength excitation. The electron/hole drift-velocity and electron mobility across the Ga0.8In0.2As0.16Sb0.84 active layer can further be estimated based on the extracted internal response time and device modeling technique. Using the heterodyne-beating setup at 1.55-mu m wavelength, the demonstrated device shows a saturation current at similar to 3.6 mA (at 6-GHz operating frequency), which is mainly limited by the space-charge (electron/hole) induced screening effect at the depleted absorption region.