期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 63, 期 3, 页码 1254-1259出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2521663
关键词
Charge transport; drift limited; modeling; polymer FET; subthreshold
资金
- Agency for Science, Technology and Research
- National Science Foundation (NSF) Nanosystems Engineering Research Center on Nanomanufacturing Systems for Mobile Computing and Mobile Energy Technologies through NSF within the Division of Engineering Education and Centers [1160494]
- NSF within the Division of Electrical, Communications and Cyber Systems [1407932]
- Research Grant of KwangWoon University
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1407932] Funding Source: National Science Foundation
Polymer FETs generally have a wide subthreshold regime due to a lot of disorder, mainly originated from domain/grain boundaries. Deep state's charge transport of polymer transistors has not been investigated due to the difficulty in determining the field-effect mobility in the subthreshold region. In this paper, the features of the charge transport in deep and shallow states of polymer transistors will be discussed in detail through an accurate modeling and an analysis of subthreshold behavior in transistors. Charge transport in shallow states can be described by multiple trap and release transport, while hopping transport models, such as variable range hopping or Gaussian disorder-based model, describe well the deeper state's charge transport. In addition, the transition between the conduction regimes is a function of temperature and carrier density.
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