4.6 Article

Performance of NUV-HD Silicon Photomultiplier Technology

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 63, 期 3, 页码 1111-1116

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2516641

关键词

Excess noise factor (ENF); positron emission tomography; silicon photomultipliers (SiPMs)

资金

  1. European Union [FP7-241711]

向作者/读者索取更多资源

In this paper, we present the full characterization of a new high-density (HD) cell silicon photomultiplier (SiPM) technology for ultraviolet (UV) and blue light detection, named near UV HD SiPM. Thanks to an optimized border region around each cell, we were able to develop devices having a very high detection efficiency and, at the same time, a high dynamic range. We produced SiPMs with a square cell pitch of 15, 20, 25, and 30 mu m featuring a peak efficiency in the violet region ranging from 40% to 55%, according to the cell size. We tested this technology for time-of-flight positron emission tomography. Using two 4x4 mm(2) SiPMs with a 25 x 25 mu m(2) cell pitch coupled to 3 x 3 x 5 mm(3) LYSO scintillators, we reached for the first time 100-ps full-width at half-maximum coincidence time resolution. This result was independent of the temperature in a range from 20 degrees C to -20 degrees C. At the same time, thanks to the high dynamic range and low correlated noise, we obtained an energy resolution lower than 9% for 511-keV gamma-rays.

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