期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 63, 期 4, 页码 1630-1636出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2532602
关键词
4H-SiC; bevel termination; dicing; edge termination; high voltage; junction termination extension (JTE); silicon carbide
资金
- Division of Engineering Education and Centers within the Engineering Research Centers Program through the National Science Foundation [EEC-0812121]
This paper reviews the bevel-edge termination techniques for silicon carbide (SiC) power devices, such as bevel junction termination extension (JTE), resistive-bevel termination, bevel-assisted JTE, and positive-bevel termination. The proposed bevel-edge termination techniques significantly reduce the chip size for SiC power devices. PiN diodes and test structures were fabricated to quantify the relative performance of the proposed structures. Quantitative comparison in chip size reduction, process schemes, and future research directions is discussed in detail.
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