期刊
DIAMOND AND RELATED MATERIALS
卷 121, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2021.108774
关键词
Graphene quantum dots; N-doped graphene; Chemical vapor deposition; Photodetector
类别
资金
- National Natural Science Foundation of China [11704204, 61604084, 51802337]
- State Key Laboratory of ASIC System [2020KF007]
- K. C. Wong Magna Fund in Ningbo University
- Natural Science Foundation of Ningbo [2017A610104]
This study successfully obtained nitrogen-doped graphene monolayers by seeding nitrogen-doped graphene quantum dots (N-GQDs) on a catalytic substrate, and fabricated high-performance infrared photodetectors.
The application of graphene in the field of microelectronics is becoming more and more urgent with the emergence of bottlenecks in silicon-based semiconductor technology, and the ability of controllable doping in graphene is, therefore, strongly demanded to tune their electronic or optoelectronic properties for the fabrication of high-performance devices. Herein, through seeding zero-dimensional (0D) nitrogen doped graphene quantum dots (N-GQDs) on a catalytic substrate, the graphene monolayer with nitrogen doping is obtained via chemical vapor deposition (CVD). X-ray photoelectron spectroscopy (XPS) characterization shows the doping concentration reaches up to 32%. Experimental and theoretical investigations reveal that N-GQDs act as the nucleation sites for the epitaxial growth of doped graphene monolayers. Finally, infrared photodetector built on N doped graphene (NG) film is fabricated, accompanying with high detectivity (similar to 1.52 x 10(10) cm Hz(1/2) W-1) and responsivity (79 mA W-1) at the wavelength of 1550 nm. Our study may provide a controllable and convenient approach to achieve doped graphene, which paves the way for the application of graphene in the field of microelectronics.
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