4.6 Article

The effect of the PVA hydrolysis degree on the electrical properties of organic resistive memories based on PVA plus CNT composites

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DIAMOND AND RELATED MATERIALS
卷 121, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2021.108720

关键词

Organic resistive memory devices; Carbon nanotubes; Poly(vinyl alcohol); Composites

资金

  1. CONACYT [707791, 722355]

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This work investigates the influence of the interaction between functionalized multiwall carbon nanotubes (f-CNTs) and a polymeric matrix on the electrical behavior of resistive memories. The findings suggest that the hydrolysis degree of the polymeric matrix plays a crucial role in the morphology, thickness, and current-voltage behavior of the PVA + f-CNT composites.
This work studies the interaction effect between functionalized multiwall carbon nanotubes (f-CNTs) and a polymeric matrix in the electrical behavior of resistive memories. f-CNTs were synthesized by spray pyrolysis using xylene-ethanol (1:0.8 v/v) as the reaction mixture, allowing the in-situ functionalization (OH, COOH, C-H, C-OH groups) on the f-CNT surface and, then, improving their solubility in polar solvents as well as their dispersion in a polymeric matrix. Two types of polyvinyl alcohol (PVA) with different hydrolysis degrees were used, PVA with high hydrolysis (HD) degree (Mw 89,000-98,000, 99 + % hydrolyzed) and PVA with low hydrolysis (LD) degree (Mw 9000-10,000, 80% hydrolyzed), for the fabrication of the organic resistive memories. The PVA + f-CNT composites show significant differences in the morphology, thickness and current-voltage (I-V) electrical behavior as a function of the hydrolysis degree of the PVA matrix. In the case of I-V measurements, our results are broadly different from those reported in the literature, PVA-LD + f-CNT composites at 1, 3 and 5 wt% f-CNTs show rewritable behavior, whereas PVA-HD + f-CNT composites the rewritable behavior started at 5 wt%. From here, we conclude that the polymeric matrix can play an essential role in the resistive memory behavior.

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