Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen

We have deposited silicon and nitrogen doped diamond-like carbon (Si-N-DLC) films via plasma-enhanced chemical vapor deposition using H2 as a dilution gas and investigated the annealing effects on their structure, chemical bonding, and mechanical, optical, and electrical properties. The internal stress decreased with increasing annealing temperature, which increased the critical load. For the Si-N-DLC films annealed at 347-490 degrees C, sp2 C clustering was almost suppressed, and the amount of bound hydrogen increased. The optical bandgap of the Si-N-DLC films changed little even at 490 degrees C. Si-N-DLC/p-type Si heterojunctions annealed at 270 degrees C and 347 degrees C provided higher rectification ratios than heterojunctions annealed at different temperatures. The improvement in the current-voltage characteristics of these heterojunctions was probably due to the reduction of defects in the Si-N-DLC films by the annealing.

Automated summary

In this study, silicon and nitrogen doped diamond-like carbon (Si-N-DLC) films were deposited and annealed to investigate their properties. The results show that the annealing temperature has an effect on the internal stress and critical load of the films. Within a certain temperature range, the annealed Si-N-DLC films exhibit good performance and potential application value. Annealing can reduce defects in the films and improve the current-voltage characteristics of heterojunctions.