期刊
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
卷 16, 期 2, 页码 227-234出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2016.2564448
关键词
Band-to-band tunneling (BTBT); heterogeneous dielectric (HD); interface trap charges (ITCs); interface trap layer; parasitic capacitance; tunneling FET (TFET)
资金
- University Grants Commission
In this paper, we have investigated device reliability by studying the impact of interface traps, both donor (positive interface charges) and acceptor (negative interface charges), present at the Si/SiO2 interface, on analog/RF performance and linearity distortion analysis of heterogeneous-gate-dielectric gate-all-around tunnel FET (HD-GAA-TFET), which is used to enhance the tunneling current of TFET. Various figures of merit such as cutoff frequency f(T), maximum oscillation frequency f(max), transconductance frequency product, higher order transconductance coefficients (g(m1), g(m3)), VIP2, VIP3, IIP3, IMD3, zero crossover point, and 1-dB compression point have been investigated, and the results obtained are simultaneously compared with a gate-all-around TFET (GAA-TFET). Simulation results indicate that HD-GAA-TFET is more immune toward the interface trap charges present at the Si/SiO2 interface than the GAA TFET and hence can act as a better candidate for low power switching applications. All simulations have been done on an ATLAS device simulator.
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