期刊
CURRENT APPLIED PHYSICS
卷 31, 期 -, 页码 22-28出版社
ELSEVIER
DOI: 10.1016/j.cap.2021.07.009
关键词
Unipolar resistance switching; Threshold resistance switching; Oxygen vacancy; Insulator-to-metal transition; Oxide heterostructure
资金
- National Science Foundation of China [11974099]
- Intelligence Introduction Plan of Henan Province in 2021 [CXJD2021008]
- Plan for Leading Talent of Fundamental Research of the Central China in 2020
- Natural Science Foundation of Henan Province [202300410090]
- Key Scientific Research Projects of Henan Province [21A140005]
Coexistence of nonvolatile unipolar and volatile threshold resistive switching is observed in Pt/LaMnO3(LMO)/Pt structures. Nonvolatile switching is achieved with negative bias, while volatile switching is obtained with positive bias. Voltage polarity can control the type of resistance switching, which is significant for in-memory computing technology applications.
Coexistence of nonvolatile unipolar and volatile threshold resistive switching is observed in the Pt/LaMnO3(LMO)/Pt hetemstructures. The nonvolatile unipolar memory is achieved by applying a negative bias, while the volatile threshold resistive switching is obtained under a positive bias. Additionally, the pristine low resistance state (LRS) could be switched to high resistance state (HRS) by the positive voltage sweeping, which is attributed to the conduction mechanism of Schottky emission. Subsequently, the insulator-to-metal transition in the LMO film due to formation of ferromagnetic metallic phase domain contributes to the volatile threshold resistive switching. However, the nonvolatile unipolar switching under the negative bias is ascribed to the formation/rupture of oxygen-vacancy conducting filaments. The simultaneously controllable transition between nonvolatile and volatile resistance switching by the polarity of the applied voltage exhibits great significance in the applications of in-memory computing technology.
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