Magnetoresistance of epitaxial SrRuO3 thin films on a flexible CoFe2O4-buffered mica substrate

We have investigated the magnetoresistance of epitaxial SrRuO3 (SRO) thin films on a flexible CoFe2O4 (CFO) buffered mica substrate. High-resolution X-ray diffraction and transmission electron microscopy revealed that the SRO film could be epitaxially grown on a mica substrate with a 22-nm-thick CFO buffer layer. The epitaxial relationships were SRO [1-10] || CFO [1-10] || mica [010] and SRO [111] || CFO [111] || mica [001]. Epitaxial SRO thin films exhibited two magnetoresistance (MR) peaks; one peak occurred at a Curie temperature of 160 K (HT-MR) and the other at a low temperature of 40 K (LT-MR). The LT-MR increased more rapidly with an increase of the buffer layer thickness than the HT-MR. The LT-MR was similar for the two orthogonal current directions with respect to the magnetic field. We explained the HT-MR and LT-MR in terms of the suppression of spin fluctuations and the magnetic rotation of crystallographic domains, respectively.

Automated summary

This study investigated the magnetoresistance effect of epitaxial SRO films on a flexible CFO buffered mica substrate. The results showed that the magnetoresistance of the SRO films exhibited different characteristics at different temperatures and displayed consistent properties for orthogonal current directions with respect to the magnetic field.