期刊
CRYSTAL RESEARCH AND TECHNOLOGY
卷 57, 期 1, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/crat.202100126
关键词
beta-Ga2O3; effective mass; electronic structure; generalized gradient approximation; Hubbard term; optical properties
资金
- National Natural Science Foundation of China [11664023]
- Youth Science Foundation of Lanzhou Jiaotong University [2020015]
- Key Research and Development Program of Gansu Province [202102]
- Tianyou Innovation Team of Lanzhou Jiaotong University
- HongLiu first-class disciplines Development Program of Lanzhou University of Technology
- State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals of China
The study found that the Si-doped beta-Ga2O3 with vacancy system has good conductivity and absorptivity, with a significant improvement in light absorption capability.
The electronic structure and optical properties of Si-doped beta-Ga2O3 with vacancy are studied using the generalized gradient approximation plus the Hubbard term. The results show that the most easily formed are doping systems, followed by the doped with vacancy systems, and the vacancy systems. The conductivity of beta-Ga2O3 is enhanced significantly after being doped with Si, but its absorptivity decreased. The defect levels generated by the vacancy system can enhance the light absorption capability, especially O vacancy system. The doped with vacancy system may improve the conductivity and absorptivity in the visible range of the beta-Ga2O3.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据