Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface

High mobility quasi two-dimensional electron gas (2DEG) found at the CaZrO3/SrTiO3 nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics. Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO3/SrTiO3 interface. Furthermore, the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage. Remarkably, the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage. The diffusion constant increases by a factor of similar to 19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from -50 V to 100 V. These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling, but also have great significance in developing various oxide functional devices.

Automated summary

The carrier density and mobility at the CaZrO3/SrTiO3 interface can be tuned by gate voltage, along with the magnitude of Rashba spin-orbit interaction. Furthermore, the diffusion constant and the spin-orbit relaxation time can be strongly adjusted by gate voltage.