4.5 Article

Interband cascade lasers with short electron injector

期刊

CHINESE OPTICS LETTERS
卷 20, 期 2, 页码 -

出版社

OSA-OPTICAL SOC
DOI: 10.3788/COL202220.022501

关键词

interband cascade lasers; quantum well; mid-infrared; semiconductor lasers

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资金

  1. National Key Research and Development Project [2018YFB2200500]
  2. National Natural Science Foundation of China [61790583, 61774150]

向作者/读者索取更多资源

We demonstrate GaSb-based interband cascade lasers with high output power and good reliability.
We demonstrate GaSb-based interband cascade lasers (ICLs) emitting around 3.65 mu m, which exhibit a room-temperature continuous-wave (CW) output power above 100 mW. Cavity-length analysis showed that the laser structure has a low internal loss of 3 cm(-1) while maintaining a total internal quantum efficiency greater than one. After 6400 h CW operation at 25 degrees C, the threshold current of the laser increased by 3%, and the output power decreased by 7%, indicating good reliability of the device.

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