Stacking driven Raman spectra change of carbon based 2D semiconductor C3N

As a two-dimensional carbon based semiconductor, C3N acts as a promising material in many application areas. However, the basic physical properties such as Raman spectrum properties of C3N is still not clear. In this paper, we clarify the Raman spectrum properties of multilayer C3N. Moreover, the stacking driven Raman spectra change of multilayer C3N is also discussed. (C) 2021 Published by Elsevier B.V. on behalf of Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences.

Automated summary

This paper explores the Raman spectrum properties of C3N and discusses the stacking driven Raman spectra change of multilayer C3N.