4.7 Article

Investigating the potential of ammonium retention by graphene oxide ceramic nanofiltration membranes for the treatment of semiconductor wastewater

期刊

CHEMOSPHERE
卷 286, 期 -, 页码 -

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.chemosphere.2021.131745

关键词

Ammonium removal; Ceramic nanofiltration membrane; Graphene oxide; Layer-by-Layer assembly; Low fouling potential; Semiconductor wastewater

资金

  1. National Research Foundation of Korea (NRF) - Korea government (Ministry of Science and ICT) [2020M3H4A3106360]
  2. National Research Foundation of Korea [2020M3H4A3106359] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This study demonstrates the fabrication of GO-assembled ceramic NF membranes for effective ammonium removal from semiconductor wastewater. The membranes showed high ammonium removal and low fouling potential, making them promising options for wastewater treatment.
Ceramic membranes with high chemical and fouling resistance can play a critical role in treating industrial wastewater. In the present study, we demonstrate the fabrication of graphene oxide (GO) assembled ceramic nanofiltration (NF) membranes that provide effective ammonium retention and excellent fouling resistance for treating semiconductor wastewater. The GO-ceramic NF membranes were prepared via a layer-by-layer (LbL) assembly of GO and polyethyleneimine (PEI) on a ceramic ultrafiltration (UF) substrate. The successful fabrication of the GO-ceramic NF membranes was verified through surface characterization and pore size evaluation. We also investigated the performance of GO-ceramic NF membranes assembled with different numbers of bilayers for the rejection of ammonium ions. GO-ceramic NF membranes with three GO-PEI bilayers exhibited 8.4-and 3.2-times higher ammonium removal with simulated and real semiconductor wastewater, respectively, compared to the pristine ceramic UF substrate. We also assessed flux recovery after filtration using real semiconductor wastewater samples to validate the lower fouling potential of the GO-ceramic NF membranes. Results indicate that flux recovery increases from 39.1 % in the pristine UF substrate to 71.0 % and 90.8 % for the three-and ten-bilayers GO-ceramic NF membranes, respectively. The low-fouling GO-ceramic NF membranes developed in this study are effective and promising options for the removal of ammonium ions from semiconductor wastewater.

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