期刊
CHEMICAL ENGINEERING JOURNAL
卷 429, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2021.131312
关键词
Photoelectrocatalysis; S-scheme heterojunction; H2O2 production; Interface modulation; Charge transfer bridge
资金
- National Natural Science Foundation of China [61764003, 51462008]
- Major Science and Technology Planning Project of Hainan Province [ZDKJ201810]
- Key Research and Development Program of Hainan Province [ZDYF2020222]
- Hainan Academician Innovation Platform Funding
This study demonstrates the construction of high-performance S-scheme heterojunctions 2H-MoSe2/TiO2 NRAs and (1 T-2H)-MoSe2/TiO2 NRAs for efficient photoelectrocatalytic generation of H2O2. Experimental results show a 3.3-fold increase in H2O2 production rate for the former and a 4.7-fold enhancement for the latter biphasic interface. The 1 T metallic MoSe2 plays a crucial role as a charge carrier transfer bridge in promoting S-type charge transportation.
Developing high-performance photocatalytic electrodes is significant for realizing the efficient photoelectrocatalytic generation of H2O2 for converting naturally available chemicals. It is also a challenge to achieve high conversion efficiencies. Herein, we construct a step-scheme (S-scheme) heterojunction using core-shell 2H semiconductor MoSe2 phase at TiO2 nanorod arrays (2H-MoSe2/TiO2 NRAs) with an in-situ synthesis of 1 T metallic phase in the initial 2H-MoSe2 overlayer to build coupled, biphasic (1 T-2H)-MoSe2/TiO2 NRAs successfully. This S-scheme heterojunction of both 2H-MoSe2/TiO2 NRAs and (1 T-2H)-MoSe2/TiO2 NRAs presents excellent photoelectrocatalytic activities for H2O2 production under ultraviolet light illumination. The former yields an H2O2 production rate that is 3.3 times as high as the pristine TiO2 NRAs, while the latter biphasic interface achieves a 4.7-fold enhancement. The 1 T metallic MoSe2 plays a vital role as the charge carrier transfer bridge between 2H-MoSe2 and TiO2 to promote the S-type charge transportation. Further DFT calculations and experimental results indicate that the MoSe2 overcoating could effectively suppress H2O2 decomposition. This work provides a promising strategy to construct high-performance S-scheme heterojunctions through in-situ interface modulation.
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