4.7 Article

Near infrared persistent luminescence of transparent Zn-Ga-Ge-O:Cr3+ glass ceramic for optical information storage

期刊

CERAMICS INTERNATIONAL
卷 48, 期 3, 页码 3274-3279

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2021.10.101

关键词

Persistent luminescence; Near-infrared; Glass-ceramic; Photostimulated luminescence

资金

  1. National Natural Science Foundation of China [51902226, 61905099, 52002288]
  2. Natural Science Foundation of Guangdong Province [2019A1515012072]
  3. Innovation Projects of Department of Education of Guangdong Province [2018KQNCX266, 2020KTSCX153]
  4. Innovative Leading Talents of Jiangmen [Jiangmen (2019) 7]
  5. Science and Technology Projects of Jiangmen [2020JC01012, 2020JC01018]
  6. research and development fund of Wuyi university joint Hong Kong-Macao [2019WGALH04, 2019WGALH09]

向作者/读者索取更多资源

This article investigates the optical storage properties of Cr3+-doped afterglow phosphors, demonstrating the tunability of the trapped electron levels through partial hetero-valence substitution. The results show enhanced high-temperature luminescence intensity and larger optical storage capacity in the modified glass ceramics.
Cr3+-doped near-infrared (NIR) afterglow phosphors have received wide recognition in the optical storage field because of the high signal-to-noise ratio and broad excitation spectra. In this article, the high-temperature TL intensity of ZnGa2O4:Cr3+ afterglow glass ceramic (ZGO:Cr3+ GC) was enhanced via partial hetero-valence substitution of Ge for Ga, demonstrating the tunability of the trapped electron levels in ZGO:Cr3+ GC. The persistent luminescence phosphor ZGO:Cr3+ GC exhibits a zero-phonon lines emission peaking at 698 nm, attributing to the E-2 ->(4)A(2g), transition of Cr3+ ions. Moreover, the trap levels in Zn-Ga-Ge-O:Cr3+ glass ceramic (ZGGO:Cr3+ GC) are deeper than those of the Ge-free one and the captured electrons in deeper levels cannot be released only by the ambient thermal energy, thus the optical storage capacity of ZGGO:Cr3+ GC is much larger. By means of an additional 980 nm laser photostimulation, an intense NIR emission could be obtained. In consequence, ZGGO:Cr3+ GC has a promising application prospect in optical information storage field.

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