SiC/SiO2 interface properties formed by low-temperature ozone re-oxidation annealing

We propose an ECR ozone plasma re-oxidation annealing (ROA) method that can introduce high-concentration and high-reactivity O atoms to eliminate defects near the SiC/SiO2 interface with low temperature (400 degrees C). This method can more effectively improve the electrical performance of SiC MOS capacitors compared with other ROA methods, including O-2, O-3 and O-2 plasma ROA methods. Secondary ion mass spectroscopy (SIMS), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS) are performed. Results indicate that the O3P-ROA can evidently re-oxidize near-interface defects, which optimize near-interface properties, including the elemental distribution of the near-interface region and the morphology of the SiC/SiO2 interface. In addition, the effects of temperature and oxygen element on near-interface properties of SiC MOS capacitors are discussed in this paper.

Automated summary

We propose an ECR ozone plasma re-oxidation annealing (ROA) method that can introduce high-concentration and high-reactivity O atoms to eliminate defects near the SiC/SiO2 interface with low temperature. The results show that this method can effectively improve the electrical performance of SiC MOS capacitors and optimize the elemental distribution and morphology of the interface region. The effects of temperature and oxygen element on the near-interface properties of SiC MOS capacitors are also discussed in this paper.