4.7 Article

Impedance matching optimization of SiCf/Si3N4-SiOC composites for excellent microwave absorption properties

期刊

CERAMICS INTERNATIONAL
卷 48, 期 2, 页码 1889-1897

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2021.09.273

关键词

Microwave absorption; Impedance match; Double-layer structure; Interface polarization; High temperature

资金

  1. National Science and Technology Major Project [J2019-VI-0014-0129]
  2. National Natural Science Foundation of China [51902257, 51972268, 51571166, 51761135032]

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SiCf/Si3N4-SiOC composites with multiscale structural design achieved excellent EM wave absorption performance and impedance matching, providing a new design opinion for broad-band EM absorbing SiCf-CMCs at high temperatures.
SiC fiber reinforced ceramic matrix composites (SiCf-CMCs) are considered to be one of the most promising materials in the electromagnetic (EM) stealth of aero-engines, which is expected to achieve strong absorption and broad-band performance. Multiscale structural design was applied to SiCf/Si3N4-SiOC composites by construction of micro/nanoscale heterogeneous interfaces and macro double-layer impedance matching structure. SiCf/Si3N4-SiOC composites were fabricated by using SiC fibers with different conductivities and SiOC-Si3N4 matrices with gradient impedance structures to improve impedance matching effectively. Owing to its unique structure, SiCf/Si3N4-SiOC composites (A3-composites) achieved excellent EM wave absorption performance with a minimum reflection coefficient (RCmin) of -25.1 dB at 2.45 mm and an effective absorption bandwidth (EAB) of 4.0 GHz at 2.85 mm in X-band. Moreover, double-layer SiCf/Si3N4-SiOC with an improved impedance matching structure obtained an RCmin, of -56.9 dB and an EAB of 4.2 GHz at 3.00 mm, which means it can absorb more than 90% of the EM waves in the whole X-band. The RC is less than -8 dB at 2.6-2.8 mm from RT to 600 degrees C in the whole X-band, displaying excellent high-temperature absorption performance. The results provide a new design opinion for broad-band EM absorbing SiCf-CMCs at high temperatures.

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