High-temperature electrical properties of polymer-derived ceramic SiBCN thin films fabricated by direct writing

The in situ temperature monitoring of hot components in harsh environments remains a challenging task. In this study, SiBCN thin-film resistance grids with thicknesses of 1.8 mu m were fabricated on alumina substrates via direct writing. Owing to their dense microscopic morphology and extremely high graphitisation level, the produced SiBCN films exhibited large high-temperature oxidation resistance and electrical conductivity. The resistance-temperature, stability, and repeatability characteristics of these films were examined in an aerobic environment at temperatures up to 800 degrees C. The obtained results revealed that the thermistor resistance decreased monotonously with increasing temperature from room temperature to 800 degrees C. The SiBCN film resistance variations observed during repeated temperature cycling in the regions of 505-620 degrees C and 610-720 degrees C were 0.09% and 1.7%, respectively. The high cyclability and stability of the SiBCN thin film thermistor suggested its potential applicability for the in situ temperature monitoring of hot components in harsh environments.

Automated summary

In this study, SiBCN thin-film resistance grids were fabricated and tested for their resistance-temperature characteristics, stability, and repeatability in high-temperature environments. The results showed that the SiBCN films exhibited excellent oxidation resistance and electrical conductivity, making them suitable for in situ temperature monitoring of hot components in harsh environments.