4.7 Article

Enhanced thickness uniformity of large-scale α-Ga2O3 epilayers grown by vertical hot-wall mist chemical vapor deposition

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Condensed Matter

High-Quality Si-Doped β-Ga2O3Films on Sapphire Fabricated by Pulsed Laser Deposition

Sergiy Khartsev et al.

Summary: Pulsed laser ablation is used to form high-quality silicon-doped beta-Ga(2)O(3)films on sapphire by depositing Ga(2)O(3)and Si from two separate sources, achieving a single crystallinity with a Si concentration of about 1 x 10(20) cm(-3) for optimal electrical performance. Depositing Si and Ga(2)O(3)from two separate sources leads to high crystalline quality and a mobility of about 2.9 cm(2) (V s)(-1).

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2021)

Article Engineering, Electrical & Electronic

Synthesis and characterization of gallium oxide in strong reducing growth ambient by chemical vapor deposition

P. R. Jubu et al.

Summary: Ga2O3/glass films were successfully synthesized by CVD in the temperature range of 850-1000 degrees Celsius without substrate deformation. Increasing deposition temperature led to higher crystalline quality, thicker films, higher Ga content, and lower O content.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

Article Chemistry, Multidisciplinary

Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition

Minh-Tan Ha et al.

Summary: The hypothesis suggests that gravity-driven sedimentation and water gliding due to the Leidenfrost effect play a role in the deposition behaviors of epilayers via mist CVD. The deposition rate, thickness uniformity, and surface morphology depend on various factors, including velocity, angle, probability, gliding distance, and droplet lifetime. Practical experiments show that factors like substrate tilt angle and mist stream velocity can affect deposition rate and uniformity of thin films.

ADVANCED MATERIALS INTERFACES (2021)

Article Physics, Applied

Initial nucleation scheme of Ga2O3 on (0001) sapphire by mist CVD for the growth of α-phase

Hitoshi Takane et al.

Summary: The study compared the growth characteristics of α-Ga2O3 under different growth methods and revealed the unique mechanism of mist CVD-grown α-Ga2O3.

JAPANESE JOURNAL OF APPLIED PHYSICS (2021)

Article Physics, Applied

Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates

Alexander Y. Polyakov et al.

Summary: Ga2O3 films grown with AlN/AlGaN exhibited a highly conducting e-phase, while films grown with Al2O3 were mainly composed of (-201) beta-Ga2O3. The electrical properties of the heterojunctions were largely influenced by the properties of the Ga2O3 films, showing measurable photosensitivity for 259 nm wavelength excitation.

JOURNAL OF APPLIED PHYSICS (2021)

Article Nanoscience & Nanotechnology

The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition

Tatsuya Yasuoka et al.

Summary: In this study, alpha-Ga2O3 thin films were grown on a c-plane sapphire substrate using a third generation mist chemical vapor deposition system. It was found that HCl has effects on the growth rate, purity, and surface roughness of alpha-Ga2O3 films. By optimizing the HCl/Ga supply ratio and Ga supply rate, the purity of the films was improved.

AIP ADVANCES (2021)

Article Nanoscience & Nanotechnology

β-Ga2O3 on Si (001) grown by plasma-assisted MBE with γ-Al2O3 (111) buffer layer: Structural characterization

Tobias Hadamek et al.

Summary: In this study, beta-Ga2O3 thin films were grown on a silicon surface using plasma-assisted molecular beam epitaxy at different temperatures. The structural characteristics of the films were analyzed through various testing methods, and atomistic models of gallia-alumina interfaces were proposed based on the results.

AIP ADVANCES (2021)

Article Physics, Applied

Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire

J. P. McCandless et al.

Summary: The study reveals that an aluminum oxide cap grown by atomic layer deposition can maintain the stability of alpha-(Al,Ga)2O3 under high-temperature conditions, while uncapped alpha-Ga2O3 undergoes a structural phase transition at high temperatures. Additionally, uncapped alpha-(Al,Ga)2O3 with 46% and 100% Al content also remains stable at high temperatures.

APPLIED PHYSICS LETTERS (2021)

Article Materials Science, Ceramics

Characterization of single crystal β-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD

Di Wang et al.

CERAMICS INTERNATIONAL (2020)

Article Chemistry, Physical

Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface

Manoj K. Yadav et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2020)

Article Materials Science, Multidisciplinary

Electrical Properties of Sn-Doped α-Ga2O3 Films on m-Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition

Kazuaki Akaiwa et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2020)

Article Materials Science, Multidisciplinary

Evaporation of materials from the molten salt reactor fuel under elevated temperatures

Jarmo Kalilainen et al.

JOURNAL OF NUCLEAR MATERIALS (2020)

Article Nanoscience & Nanotechnology

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization-Based Structure Searches

Xue Wang et al.

ADVANCED ELECTRONIC MATERIALS (2020)

Article Physics, Applied

MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

George Seryogin et al.

APPLIED PHYSICS LETTERS (2020)

Article Materials Science, Multidisciplinary

HVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates

V. Nikolaev et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Article Materials Science, Multidisciplinary

Deposition of Gallium Oxide Nanostructures at Low Substrate Temperature by Chemical Vapor Deposition

P. R. Jubu et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Article Nanoscience & Nanotechnology

Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films

J. H. Leach et al.

APL MATERIALS (2019)

Article Physics, Applied

Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications

Giang T. Dang et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2019)

Article Nanoscience & Nanotechnology

Thin-film transistors based on wide bandgap Ga2O3 films grown by aqueous-solution spin-coating method

Dazheng Chen et al.

MICRO & NANO LETTERS (2019)

Article Materials Science, Multidisciplinary

Growth and characterization of F-doped α-Ga2O3 thin films with low electrical resistivity

Shota Morimoto et al.

THIN SOLID FILMS (2019)

Review Chemistry, Analytical

A comprehensive review on ultrasonic spray pyrolysis technique: Mechanism, main parameters and applications in condensed matter

Saeed Rahemi Ardekani et al.

JOURNAL OF ANALYTICAL AND APPLIED PYROLYSIS (2019)

Article Physics, Applied

Materials issues and devices of α- and β-Ga2O3

Elaheh Ahmadi et al.

JOURNAL OF APPLIED PHYSICS (2019)

Article Physics, Applied

High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K

Boyan Wang et al.

APPLIED PHYSICS LETTERS (2019)

Article Materials Science, Multidisciplinary

Understanding Thickness Uniformity of Ga2O3 Thin Films Grown by Mist Chemical Vapor Deposition

Minh-Tan Ha et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)

Article Materials Science, Multidisciplinary

Growth of 2-Inch α-Ga2O3 Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition

Kyoung-Ho Kim et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)

Article Materials Science, Multidisciplinary

Growth and characterization of alpha-, beta- and epsilon-phases of Ga2O3 using MOCVD and HVPE techniques

Yao Yao et al.

MATERIALS RESEARCH LETTERS (2018)

Article Physics, Applied

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

S. J. Pearton et al.

JOURNAL OF APPLIED PHYSICS (2018)

Review Physics, Applied

Current status of Ga2O3 power devices

Masataka Higashiwaki et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2016)

Article Crystallography

Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD

F. Boschi et al.

JOURNAL OF CRYSTAL GROWTH (2016)

Article Chemistry, Physical

The properties of gallium oxide thin film grown by pulsed laser deposition

Qian Feng et al.

APPLIED SURFACE SCIENCE (2015)

Article Physics, Applied

Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystal

R. Cusco et al.

JOURNAL OF APPLIED PHYSICS (2015)

Article Chemistry, Physical

A comprehensive analysis of the evaporation of a liquid spherical drop

B. Sobac et al.

JOURNAL OF COLLOID AND INTERFACE SCIENCE (2015)

Proceedings Paper Materials Science, Multidisciplinary

Ultrasonic-assisted mist chemical vapor deposition of II-oxide and related oxide compounds

Shizuo Fujita et al.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8 (2014)

Article Chemistry, Multidisciplinary

Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction

Helen Y. Playford et al.

CHEMISTRY-A EUROPEAN JOURNAL (2013)

Article Chemistry, Physical

Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films

S. Sampath Kumar et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2013)

Article Crystallography

Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition

Takayoshi Oshima et al.

JOURNAL OF CRYSTAL GROWTH (2012)

Article Chemistry, Inorganic & Nuclear

Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga2O3 Thin Films

Malte Hellwig et al.

EUROPEAN JOURNAL OF INORGANIC CHEMISTRY (2009)

Article Physics, Applied

Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors

Takayoshi Oshima et al.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2007)

Article Materials Science, Multidisciplinary

Simulation and experimental study of spray pyrolysis of polydispersed droplets

W. Widiyastuti et al.

JOURNAL OF MATERIALS RESEARCH (2007)