期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 28, 期 9, 页码 990-993出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2016.2522509
关键词
Waveguide modulator; modulators; electro-optical devices; ferroelectrics
资金
- European Commission [FP7-ICT-2013-11-619456 SITOGA]
- GVA [PROMETEOII/2014/034]
- Ministerio de Economia y Competitividad [TEC2012-38540 LEOMIS]
The influence of an in-plane multi-domain structure in BaTiO3 films grown on SrTiO3/Si buffers for highly efficient electro-optic modulation has been analyzed. The modulation performance can be significantly enhanced by rotating a certain angle, the optical waveguide, with respect to the BaTiO3 crystallographic axes. A robust electro-optical performance against variations in the domain structure as well as the lowest V-pi voltage can be achieved by using the rotation angles between 35 degrees and 55 degrees. Our calculations show that Vp voltages below 1.7 V for a modulation length of 2 mm can be obtained by means of a CMOS compatible hybrid silicon/BaTiO3 waveguide structure.
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