Pulsewidth and ambient medium effects during ultrashort-pulse laser ablation of silicon in air and water

Comparative single-shot pulse study of ablation topographies and depths on Si surfaces excited by 1030-nm sub(0.3 ps) and pico-picosecond (10 ps) laser pulses at different laser fluences in air and water environments was performed. Fast energy transport via 3D-diffusion of dense electron-hole plasma was revealed at picosecond timescale to extend transversely the ablation craters over the focal spot in air for laser pulse widths shorter, than electron-phonon thermalization time about 3 ps. In the given fluence range fluence-independent shallow ablation was observed in air for 10-ps pulses. Then, rather shallow laser ablation occurred in water at supercritical peak pulse powers, apparently, due to laser beam deterioration by self-focusing and filamentation. Finally, very intense, fluence-dependent material removal took place during wet ablation by 10-ps laser pulses at the subcritical peak pulse powers. Electron-hole plasma and related energy transport on Si surface, 1030-nm laser pulse filamentation in water, pulsewidth and ambient medium effects were revealed during the surface ablation studies.

Automated summary

This study compared the effects of single-shot laser pulses on silicon surfaces using 1030-nm sub (0.3 ps) and pico-picosecond (10 ps) pulses in air and water environments. It was found that fast energy transport via electron-hole plasma diffusion caused the ablation craters to extend over the focal spot in air. The study also revealed the fluence-dependent material removal during wet ablation by 10-ps laser pulses.