N-doping of alumina thin film support to improve the thermal stability of Catalysts: Preparation and investigation

This article presents the procedure for N - doping of alumina thin film grown on a metal substrate surface. The modification mechanism for model alumina by nitrogen during film formation is studied by in situ X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). The preparation procedure, based on NO treatment of the growing alumina film, allows for nitrogen content control by NO pressure at a substrate temperature of 670 degrees C. The proposed N - doped model alumina support is suitable for catalysis oriented surface science studies devoted to enhancing supported metal particle resistance to thermal driven sintering.

Automated summary

This article presents a procedure for N-doping of alumina thin film grown on a metal substrate surface, allowing for nitrogen content control by NO pressure. The N-doped alumina support is suitable for catalysis-oriented surface science studies.