Modulating the electron transfer and resistivity of Ag plasma implanted and assisted MoS2 nanosheets

A simple and controllable technique has been proposed for single-step co-sputtering of homogeneous Ag-power/ MoS2 film as excellent photoelectric materials. Interestingly, the binding mode of Ag plasma implanted and assisted MoS2 nanosheets are investigated by adjusting the sputtering power. The diffraction peaks of Ag2S/Ag and valence electronic structure of Ag0/Ag1+ have been studied by a combined analysis of X-ray diffraction and X-ray photoelectron spectroscopy measurements, which confirm the implantation of Ag on MoS2 nanosheets. More specifically, the slight shift of the Mo3d/S2p demonstrated that the electrons moved from the MoS2 band gap to the ground state energy level of the Ag NPs. The significantly excellent linear absorption characteristic has been demonstrated, which can be attribute to the synergetic effects of SPR and the lower energy barrier of internal defects in the more homogeneous film. The implantation and assistance of Ag plasmon not only increased the visible/near-infrared absorption and emission of MoS2 nanosheets, but also induced the high amplification of the local electric field intensity in MoS2 nanosheets. Our work provides an effective strategy for the preparation of plasmonic Ag implanted and assisted Few-Layers MoS2 nanosheets and prompts their wider applications in visible/near-infrared devices.

Automated summary

A simple and controllable technique for single-step co-sputtering of homogeneous Ag-power/ MoS2 film has been proposed as excellent photoelectric materials. By adjusting the sputtering power, the binding mode of Ag plasma implanted and assisted MoS2 nanosheets were investigated. The study demonstrates the enhanced visible/near-infrared absorption and emission of MoS2 nanosheets with the implantation and assistance of Ag plasmon.