Large difference of doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) on field effect transistor with channel of atomic layer MoS2

We examined the mechanism of the large difference of the doping effect of two molecules of tetracyanoquinodimethane(TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) on the field effect transistor (FET) property, which is composed of the atomically thin MoS2 channel. The electron acceptor behaviors of the two molecules are detected by examining the threshold voltage shift (Delta V-th) of the drain current vs gate voltage curve plot. It shows only a mild shift of similar to 4 V for the TCNQ but it shows a large value of similar to 33 V for the F4-TCNQ molecule. The similar rapid change with small amount of F4-TCNQ deposition was detected as the Fermi level shift in the ultra violet photoemission spectroscopy (UPS). The DFT calculation shows the flat lying configuration for both molecules after the structural optimization, and the difference of the charge transfer to the substrate is not large enough to explain the difference of the Delta V-th. Instead, we want to propose a model in which the bonding of the F atom of the F4-TCNQ molecule at the S-defect contribute to the initial rapid variation of the Delta V-th.

Automated summary

The study revealed a significant difference in the doping effect of TCNQ and F4-TCNQ molecules on the FET properties, with the rapid initial variation of ΔV-th attributed to the bonding of the F atom of the F4-TCNQ molecule with the S-defect.