4.7 Article

An efficient B/Na co-doped porous g-C3N4 nanosheets photocatalyst with enhanced photocatalytic hydrogen evolution and degradation of tetracycline under visible light

期刊

APPLIED SURFACE SCIENCE
卷 576, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2021.151837

关键词

g-C3N4; Doping; Hydrogen evolution; Antibiotic degradation

资金

  1. National Natural Science Foundation of China [21878257, 21276220]
  2. Major Research & Developement Projects (Social Development) of Jiangsu Province [BE2020671]
  3. Jiangsu Building Materials and Environmental Protection Equipment Collaborative Innovation Project [CP201502]
  4. High Technology R&D demonstration project, Department of Emergency Management, Jiangsu Province [YJGL-YF-2020-4]

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By utilizing element doping and morphology control strategies, B/Na co-doped porous carbon nitride nanosheets were prepared, exhibiting exceptional photocatalytic hydrogen generation and pollutant removal properties. This provides a new approach for the preparation of semiconductor photocatalysts with superior performance.
g-C3N4 has attracted wide concern owing to its function of photocatalytic degradation of pollutants and H-2 production. However, the bulk carbon nitride (BCN) has many shortcomings, such as poor light absorption ability, short life of photogenerated electrons and few reactive sites. In this study, element doping and morphology control strategies were used to enhance their activity. B/Na co-doped porous carbon nitride nanosheets (PNCN-BNa-3) were successfully prepared by controlling the heating rate and thermal post-treatment using melamine nitrate as precursor, sodium borohydride as B source and Na source. Thanks to the synergistic effect of the porous nanosheets structure and B/Na co-doped, the B/Na co-doped porous g-C3N4 nanosheets obtained wonderful photocatalytic hydrogen generation properties (5971.51 mu mol.g(-1).h(-1)), AQE value of 9.39% under the radiation of 430 nm wavelength, and high-efficiency photocatalytic removal of TC performance (the removal efficiency reached 78.39% in 30 min). This provides a new idea for the preparation of semiconductor photocatalysts with good property.

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