相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing
Hyo-Bae Kim et al.
NANOSCALE (2021)
The Past, the Present, and the Future of Ferroelectric Memories
T. Mikolajick et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Enhanced ferroelectricity in ultrathin films grown directly on silicon
Suraj S. Cheema et al.
NATURE (2020)
Low-power linear computation using nonlinear ferroelectric tunnel junction memristors
Radu Berdan et al.
NATURE ELECTRONICS (2020)
Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training
K. -Y. Hsiang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
Min Hyuk Park et al.
JOURNAL OF MATERIALS CHEMISTRY C (2020)
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
Si Joon Kim et al.
JOM (2019)
Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers
Wenwu Xiao et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide
Hojoon Ryu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering
Terence Mittmann et al.
ADVANCED MATERIALS INTERFACES (2019)
Film thickness-dependent ferroelectric polarization switching dynamics of undoped HfO2 thin films prepared by atomic layer deposition
Se-Na Choi et al.
CERAMICS INTERNATIONAL (2019)
Ferroelectric materials for neuromorphic computing
S. Oh et al.
APL MATERIALS (2019)
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
Uwe Schroeder et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Nucleation-Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films
Young Hwan Lee et al.
ADVANCED ELECTRONIC MATERIALS (2019)
A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices
Min Hyuk Park et al.
APPLIED PHYSICS REVIEWS (2019)
First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications
Myungsoo Seo et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Interplay between ferroelectric and resistive switching in doped crystalline HfO2
Benjamin Max et al.
JOURNAL OF APPLIED PHYSICS (2018)
A ferroelectric field effect transistor based synaptic weight cell
Matthew Jerry et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications
Lin Chen et al.
NANOSCALE (2018)
A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants
M. H. Park et al.
JOURNAL OF MATERIALS CHEMISTRY C (2017)
Enhancing ferroelectricity in dopant-free hafnium oxide
Ashish Pal et al.
APPLIED PHYSICS LETTERS (2017)
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors
Milan Pesic et al.
ADVANCED FUNCTIONAL MATERIALS (2016)
Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition
K. D. Kim et al.
JOURNAL OF MATERIALS CHEMISTRY C (2016)
Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
Tony Schenk et al.
ACS APPLIED MATERIALS & INTERFACES (2014)
Ferroelectric Hafnium Oxide based Materials and Devices: Assessment of Current Status and Future Prospects
J. Mueller et al.
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 12 (2014)
From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices
Stefan Mueller et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Mueller et al.
NANO LETTERS (2012)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)