Atomic layer deposition assisted surface passivation on bismuth vanadate photoanodes for enhanced solar water oxidation

Bismuth vanadate (BiVO4) is one of the most promising metal oxide semiconductors for photoelectrochemical (PEC) water oxidation. Much efforts have been dedicated on accelerating the sluggish surface water oxidation kinetics. In this study, plasma enhanced atomic layer deposition and subsequent removal of Al2O3 ultrathin overlayers on bismuth vanadate were implemented to achieve the successful passivation of surface states and significant enhancement of PEC performance. Al2O3 ultrathin overlayers were first coated on BiVO4 surface via plasma enhanced atomic layer deposition with various deposition cycles, which resulted in the decrease of PEC water oxidation activity due to the poor conductivity. The subsequent removal of surface amorphous Al2O3 passivated the surface states of the photoanodes and significantly enhanced the photocurrent densities. The passivated BiVO4 exhibited a photocurrent density of 1.34 mA.cm(-2) at 1.23 V vs. RHE, which is 73% higher than that of unmodified BiVO4. This work provides a novel strategy and deep insights on surface modification of semiconductor for photoelectrochemical energy conversion.

Automated summary

Plasma enhanced atomic layer deposition and subsequent removal of Al2O3 ultrathin overlayers on bismuth vanadate were utilized to passivate surface states and enhance PEC performance significantly. The modified BiVO4 showed a 73% increase in photocurrent density compared to unmodified BiVO4, demonstrating a novel strategy for surface modification of semiconductors in photoelectrochemical energy conversion.