期刊
APPLIED SURFACE SCIENCE
卷 562, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2021.150143
关键词
AgInGaZnS quantum dots; Single source precursor synthesis; Dithiocarbamate complexes; Photoluminescence
类别
资金
- Bolashak International Scholarship of JSC Center for International Programs''
- Kazakhstan ministry project [IRN AP08052719]
A new method for the single source molecular precursor synthesis of quinary Ag-In-Ga-Zn-S (AIGZS) quantum dots has been presented. The AIGZS quantum dots emitted light from the visible to the near-infrared region with high photoluminescence quantum yields. The optical properties and emission tunability of AIGZS quantum dots make them highly promising for various applications.
A single source molecular precursor synthesis of new quinary Ag-In-Ga-Zn-S (AIGZS) QDs is presented. Dithiocarbamate complexes with varied Ag/In/Ga/Zn ratios were prepared from AgNO3, In(NO3)3, Ga(NO3)3 and Zn (diethyldithiocarbamate)2. The thermal decomposition of these complexes at 220 C in oleylamine produces AIGZS QDs emitting from the visible to the near-infrared region and with photoluminescence quantum yields (PL QYs) up to 48.3%. For AIGZS QDs prepared with a (Ag + In + Ga)/Zn molar ratio of 1, intragap states likely involving Ag+ ions are responsible of the PL emission and the PL lifetime could reach 278 ns. A marked increase of the PL lifetime (up to 915 ns) was observed when decreasing the (Ag + In + Ga)/Zn molar ratio to 0.5. The optical properties of AIGZS QDs could be maintained after transfer in aqueous solution. AIGZS should be of high potential for various applications due to their PL emission tunability and high PL QYs.
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